CJAB25P03 - Даташиты. Аналоги. Основные параметры
Наименование производителя: CJAB25P03
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 20 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 26 ns
Cossⓘ - Выходная емкость: 296 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
Тип корпуса: PDFNWB3.3X3.3-8L
Аналог (замена) для CJAB25P03
CJAB25P03 Datasheet (PDF)
cjab25p03.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25P03 P-Channel Power MOSFET ID PDFNWB3.33.3-8L V(BR)DSS RDS(on)MAX -25A-30V20m@-10VDESCRIPTION The CJAB25P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
cjab25p03.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25P03 P-Channel Power MOSFET ID PDFNWB3.33.3-8L V(BR)DSS RDS(on)MAX -25A-30V20m@-10VDESCRIPTION The CJAB25P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
cjab25n03.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 10m@10V30 V25A14m@4.5VDESCRIPTION The CJAB25N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications F
cjab25sn06.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25SN06 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFNWB3.33.3-8L 13.5m@10V65V25A23.0m@4.5VDESCRIPTION The CJAB25SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
Другие MOSFET... CJ7252KDW , CJA03N10S , CJAA3134K , CJAA3139K , CJAB20N03 , CJAB20SN06 , CJAB25N03 , CJAB25N04 , IRFB4227 , CJAB25SN06 , CJAB35P03 , CJAB40N03 , CJAB40SN10 , CJAB55N03 , CJAB60N03 , CJAC0410 , CJAC100P03 .
History: SRT10N047HTC | HM45P02D | FQPF13N50C
History: SRT10N047HTC | HM45P02D | FQPF13N50C



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