CJAB35P03 MOSFET. Datasheet pdf. Equivalent
Type Designator: CJAB35P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 20 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 35 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 38 nC
Rise Time (tr): 22 nS
Drain-Source Capacitance (Cd): 385 pF
Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
Package: PDFNWB3.3X3.3-8L
CJAB35P03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CJAB35P03 Datasheet (PDF)
0.1. cjab35p03.pdf 
Size:1424K _jiangsu
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB35P03 P-Channel Power MOSFET ID PDFNWB3.33.3-8L V(BR)DSS RDS(on)MAX -35A15m@-10V-30VDESCRIPTION The CJAB35P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
