CJAB35P03 Datasheet. Specs and Replacement

Type Designator: CJAB35P03  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 385 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: PDFNWB3.3X3.3-8L

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CJAB35P03 datasheet

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CJAB35P03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB35P03 P-Channel Power MOSFET ID PDFNWB3.3 3.3-8L V(BR)DSS RDS(on)MAX -35A 15m @-10V -30V DESCRIPTION The CJAB35P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES ... See More ⇒

 ..2. Size:1424K  jiangsu
 cjab35p03.pdf pdf_icon

CJAB35P03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB35P03 P-Channel Power MOSFET ID PDFNWB3.3 3.3-8L V(BR)DSS RDS(on)MAX -35A 15m @-10V -30V DESCRIPTION The CJAB35P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES ... See More ⇒

Detailed specifications: CJAA3134K, CJAA3139K, CJAB20N03, CJAB20SN06, CJAB25N03, CJAB25N04, CJAB25P03, CJAB25SN06, IRF3710, CJAB40N03, CJAB40SN10, CJAB55N03, CJAB60N03, CJAC0410, CJAC100P03, CJAC100SN08, CJAC10H02

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