CJAB55N03 PDF and Equivalents Search

 

CJAB55N03 Specs and Replacement

Type Designator: CJAB55N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: PDFNWB3.3X3.3-8L

CJAB55N03 substitution

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CJAB55N03 datasheet

 ..1. Size:1663K  1
cjab55n03.pdf pdf_icon

CJAB55N03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB55N03 N-Channel Power MOSFET RDS(on)MAX ID V(BR)DSS PDFNWB3.3 3.3-8L 5.5m @10V 30 V 55A 9.5m @4.5V DESCRIPTION The CJAB55N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications ... See More ⇒

 ..2. Size:1663K  jiangsu
cjab55n03.pdf pdf_icon

CJAB55N03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB55N03 N-Channel Power MOSFET RDS(on)MAX ID V(BR)DSS PDFNWB3.3 3.3-8L 5.5m @10V 30 V 55A 9.5m @4.5V DESCRIPTION The CJAB55N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications ... See More ⇒

Detailed specifications: CJAB20SN06, CJAB25N03, CJAB25N04, CJAB25P03, CJAB25SN06, CJAB35P03, CJAB40N03, CJAB40SN10, IRFB4115, CJAB60N03, CJAC0410, CJAC100P03, CJAC100SN08, CJAC10H02, CJAC10TH10, CJAC110N03, CJAC110SN10

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