All MOSFET. CJAB55N03 Datasheet

 

CJAB55N03 Datasheet and Replacement


   Type Designator: CJAB55N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: PDFNWB3.3X3.3-8L
 

 CJAB55N03 substitution

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CJAB55N03 Datasheet (PDF)

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CJAB55N03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB55N03 N-Channel Power MOSFET RDS(on)MAX ID V(BR)DSS PDFNWB3.33.3-8L 5.5m@10V30 V55A9.5m@4.5VDESCRIPTION The CJAB55N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

 ..2. Size:1663K  jiangsu
 cjab55n03.pdf pdf_icon

CJAB55N03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB55N03 N-Channel Power MOSFET RDS(on)MAX ID V(BR)DSS PDFNWB3.33.3-8L 5.5m@10V30 V55A9.5m@4.5VDESCRIPTION The CJAB55N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

Datasheet: CJAB20SN06 , CJAB25N03 , CJAB25N04 , CJAB25P03 , CJAB25SN06 , CJAB35P03 , CJAB40N03 , CJAB40SN10 , IRFP250N , CJAB60N03 , CJAC0410 , CJAC100P03 , CJAC100SN08 , CJAC10H02 , CJAC10TH10 , CJAC110N03 , CJAC110SN10 .

History: PTA10N40B | UTT25P10 | NCE50NF220K | 2SJ409L | NVMFD5C466NL | MPSW65M046CFD | APT20M40HVR

Keywords - CJAB55N03 MOSFET datasheet

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