All MOSFET. CJAC20N03 Datasheet


CJAC20N03 MOSFET. Datasheet pdf. Equivalent

Type Designator: CJAC20N03

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 10 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13 nC

Rise Time (tr): 8(max) nS

Drain-Source Capacitance (Cd): 138 pF

Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm

Package: PDFNWB5X6-8L

CJAC20N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


CJAC20N03 Datasheet (PDF)

0.1. cjac20n03.pdf Size:1729K _jiangsu


JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC20N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 8.5m@10V30 V20A12m@4.5VDESCRIPTION The CJAC20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES

7.1. cjac20n10.pdf Size:2232K _jiangsu


JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5X6-8L Plastic-Encapsulate MOSFETS CJAC20N10 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB56-8L 31 10 20 40 DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a dra


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