CJAC20N03 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CJAC20N03
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 10 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 8(max) ns
Cossⓘ - Выходная емкость: 138 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
Тип корпуса: PDFNWB5X6-8L
Аналог (замена) для CJAC20N03
CJAC20N03 Datasheet (PDF)
cjac20n03.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC20N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 8.5m@10V30 V20A12m@4.5VDESCRIPTION The CJAC20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
cjac20n03.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC20N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 8.5m@10V30 V20A12m@4.5VDESCRIPTION The CJAC20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
cjac20n10.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5X6-8L Plastic-Encapsulate MOSFETS CJAC20N10 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB56-8L 31 10 20 40 DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a dra
cjac20n10.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5X6-8L Plastic-Encapsulate MOSFETS CJAC20N10 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB56-8L 31 10 20 40 DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a dra
Другие MOSFET... CJAC100P03 , CJAC100SN08 , CJAC10H02 , CJAC10TH10 , CJAC110N03 , CJAC110SN10 , CJAC13TH06 , CJAC150N03 , K4145 , CJAC20N10 , CJAC40N04 , CJAC50P03 , CJAC70N03 , CJAC75SN10 , CJAC80N03 , CJAC90SN12 , CJAE2002 .
History: DAMIA1100N100 | CJAC13TH06 | IPI26CN10N | SFG10S08PF | SWF20N70K | IRFBC30APBF | WMO60N02T1
History: DAMIA1100N100 | CJAC13TH06 | IPI26CN10N | SFG10S08PF | SWF20N70K | IRFBC30APBF | WMO60N02T1



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