All MOSFET. CJAC50P03 Datasheet

 

CJAC50P03 Datasheet and Replacement


   Type Designator: CJAC50P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 695 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: PDFNWB5X6-8L
 

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CJAC50P03 Datasheet (PDF)

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CJAC50P03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC50P03 P-Channel Power MOSFET ID PDFN 56-8L V(BR)DSS RDS(on)MAX -50A7m@-10V-30VDESCRIPTION The CJAC50P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High den

Datasheet: CJAC10TH10 , CJAC110N03 , CJAC110SN10 , CJAC13TH06 , CJAC150N03 , CJAC20N03 , CJAC20N10 , CJAC40N04 , IRLB4132 , CJAC70N03 , CJAC75SN10 , CJAC80N03 , CJAC90SN12 , CJAE2002 , CJBA3134K , CJBA3139K , CJBA3541K .

History: NCE6990

Keywords - CJAC50P03 MOSFET datasheet

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