All MOSFET. CJAC75SN10 Datasheet

 

CJAC75SN10 Datasheet and Replacement


   Type Designator: CJAC75SN10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 138.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 357 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: PDFNWB5X6-8L
 

 CJAC75SN10 substitution

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CJAC75SN10 Datasheet (PDF)

 ..1. Size:1037K  jiangsu
 cjac75sn10.pdf pdf_icon

CJAC75SN10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L-D Plastic-EncapsulateMOSFETS CJAC75SN10 N-Channel Power MOSFETV(BR)DSS RDS(on)TYP ID PDFN 56-8L 8.0m@10V100V 75A10.5m@4.5VDESCRIPTION The CJAC75SN10 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications . FEATURES High

 9.1. Size:2356K  jiangsu
 cjac70n03.pdf pdf_icon

CJAC75SN10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L-D Plastic-Encapsulate MOSFETS CJAC70N03 N-Channel Power MOSFET V(BR)DSS ID RDS(on)TYPPDFN 56-8L-D 4.3m@10V30 V70A6.0m@4.5VDESCRIPTION The CJAC70N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURE

Datasheet: CJAC110SN10 , CJAC13TH06 , CJAC150N03 , CJAC20N03 , CJAC20N10 , CJAC40N04 , CJAC50P03 , CJAC70N03 , 12N60 , CJAC80N03 , CJAC90SN12 , CJAE2002 , CJBA3134K , CJBA3139K , CJBA3541K , CJBA7002K , CJBB3134K .

History: APM3054NUC | WMB50P04TS | IRFP252R | 2SK2542 | HM4412A | SFS9Z14 | IRFP048PBF

Keywords - CJAC75SN10 MOSFET datasheet

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