CJAC75SN10 Specs and Replacement

Type Designator: CJAC75SN10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 138.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 357 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: PDFNWB5X6-8L

CJAC75SN10 substitution

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CJAC75SN10 datasheet

 ..1. Size:1037K  jiangsu
 cjac75sn10.pdf pdf_icon

CJAC75SN10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L-D Plastic-EncapsulateMOSFETS CJAC75SN10 N-Channel Power MOSFET V(BR)DSS RDS(on)TYP ID PDFN 5 6-8L 8.0m @10V 100V 75A 10.5m @4.5V DESCRIPTION The CJAC75SN10 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications . FEATURES High ... See More ⇒

 9.1. Size:2356K  jiangsu
 cjac70n03.pdf pdf_icon

CJAC75SN10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5 6-8L-D Plastic-Encapsulate MOSFETS CJAC70N03 N-Channel Power MOSFET V(BR)DSS ID RDS(on)TYP PDFN 5 6-8L-D 4.3m @10V 30 V 70A 6.0m @4.5V DESCRIPTION The CJAC70N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURE... See More ⇒

Detailed specifications: CJAC110SN10, CJAC13TH06, CJAC150N03, CJAC20N03, CJAC20N10, CJAC40N04, CJAC50P03, CJAC70N03, K3569, CJAC80N03, CJAC90SN12, CJAE2002, CJBA3134K, CJBA3139K, CJBA3541K, CJBA7002K, CJBB3134K

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