All MOSFET. CJAC75SN10 Datasheet

 

CJAC75SN10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CJAC75SN10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 138.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 357 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: PDFNWB5X6-8L

 CJAC75SN10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CJAC75SN10 Datasheet (PDF)

 ..1. Size:1037K  jiangsu
 cjac75sn10.pdf

CJAC75SN10 CJAC75SN10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L-D Plastic-EncapsulateMOSFETS CJAC75SN10 N-Channel Power MOSFETV(BR)DSS RDS(on)TYP ID PDFN 56-8L 8.0m@10V100V 75A10.5m@4.5VDESCRIPTION The CJAC75SN10 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications . FEATURES High

 9.1. Size:2356K  jiangsu
 cjac70n03.pdf

CJAC75SN10 CJAC75SN10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L-D Plastic-Encapsulate MOSFETS CJAC70N03 N-Channel Power MOSFET V(BR)DSS ID RDS(on)TYPPDFN 56-8L-D 4.3m@10V30 V70A6.0m@4.5VDESCRIPTION The CJAC70N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURE

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: HFS730 | 2SK2095N | BL7N65B-U | SI8483DB | IXTT68P20T | SKI10123

 

 
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