All MOSFET. CJAC90SN12 Datasheet

 

CJAC90SN12 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CJAC90SN12
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45.2 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 472 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: PDFNWB5X6-8L

 CJAC90SN12 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CJAC90SN12 Datasheet (PDF)

 ..1. Size:1170K  1
 cjac90sn12.pdf

CJAC90SN12 CJAC90SN12

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L Plastic-Encapsulate MOSFETS CJAC90SN12 N-Channel Power MOSFETV(BR)DSS RDS(on)MAX ID PDFNWB56-8L 120V 6.8m@10V 90ADESCRIPTION The CJAC90SN12 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High P

 ..2. Size:1170K  jiangsu
 cjac90sn12.pdf

CJAC90SN12 CJAC90SN12

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L Plastic-Encapsulate MOSFETS CJAC90SN12 N-Channel Power MOSFETV(BR)DSS RDS(on)MAX ID PDFNWB56-8L 120V 6.8m@10V 90ADESCRIPTION The CJAC90SN12 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High P

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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