CJAC90SN12 Datasheet and Replacement
Type Designator: CJAC90SN12
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 472 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: PDFNWB5X6-8L
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CJAC90SN12 Datasheet (PDF)
cjac90sn12.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L Plastic-Encapsulate MOSFETS CJAC90SN12 N-Channel Power MOSFETV(BR)DSS RDS(on)MAX ID PDFNWB56-8L 120V 6.8m@10V 90ADESCRIPTION The CJAC90SN12 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High P
cjac90sn12.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L Plastic-Encapsulate MOSFETS CJAC90SN12 N-Channel Power MOSFETV(BR)DSS RDS(on)MAX ID PDFNWB56-8L 120V 6.8m@10V 90ADESCRIPTION The CJAC90SN12 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High P
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AP6679GI-HF | FCPF7N60YDTU | NTD4855N-1G | DM12N65C | SM6A12NSFP | SPD04N60S5
Keywords - CJAC90SN12 MOSFET datasheet
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History: AP6679GI-HF | FCPF7N60YDTU | NTD4855N-1G | DM12N65C | SM6A12NSFP | SPD04N60S5



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