CJAC90SN12 Specs and Replacement

Type Designator: CJAC90SN12

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 472 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: PDFNWB5X6-8L

CJAC90SN12 substitution

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CJAC90SN12 datasheet

 ..1. Size:1170K  1
 cjac90sn12.pdf pdf_icon

CJAC90SN12

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5 6-8L Plastic-Encapsulate MOSFETS CJAC90SN12 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID PDFNWB5 6-8L 120V 6.8m @10V 90A DESCRIPTION The CJAC90SN12 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High P... See More ⇒

 ..2. Size:1170K  jiangsu
 cjac90sn12.pdf pdf_icon

CJAC90SN12

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5 6-8L Plastic-Encapsulate MOSFETS CJAC90SN12 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID PDFNWB5 6-8L 120V 6.8m @10V 90A DESCRIPTION The CJAC90SN12 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High P... See More ⇒

Detailed specifications: CJAC150N03, CJAC20N03, CJAC20N10, CJAC40N04, CJAC50P03, CJAC70N03, CJAC75SN10, CJAC80N03, 4435, CJAE2002, CJBA3134K, CJBA3139K, CJBA3541K, CJBA7002K, CJBB3134K, CJBB3139K, CJBD3020

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