All MOSFET. CJAE2002 Datasheet

 

CJAE2002 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CJAE2002
   Marking Code: 2002
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 26.5 nC
   trⓘ - Rise Time: 8.9 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: DFNWB3X3-8-L

 CJAE2002 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CJAE2002 Datasheet (PDF)

 ..1. Size:519K  jiangsu
cjae2002.pdf

CJAE2002

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB33-8 -L Plastic-Encapsulate MOSFETS CJAE2002 Dual N-Channel MOSFETIDV(BR)DSS RDS(on)TYP DFNWB33-8 -Lm@4.5V4.4 4.5m@4.0V18V 15A4.6 m@3.8Vm@3.1V4.95.4m@2.5VDESCRIPTION The CJAE2002 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This d

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HFW50N06 | BUK7214-75B

 

 
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