All MOSFET. CJAE2002 Datasheet

 

CJAE2002 Datasheet and Replacement


   Type Designator: CJAE2002
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.9 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: DFNWB3X3-8-L
 

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CJAE2002 Datasheet (PDF)

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CJAE2002

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB33-8 -L Plastic-Encapsulate MOSFETS CJAE2002 Dual N-Channel MOSFETIDV(BR)DSS RDS(on)TYP DFNWB33-8 -Lm@4.5V4.4 4.5m@4.0V18V 15A4.6 m@3.8Vm@3.1V4.95.4m@2.5VDESCRIPTION The CJAE2002 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This d

Datasheet: CJAC20N03 , CJAC20N10 , CJAC40N04 , CJAC50P03 , CJAC70N03 , CJAC75SN10 , CJAC80N03 , CJAC90SN12 , AON7410 , CJBA3134K , CJBA3139K , CJBA3541K , CJBA7002K , CJBB3134K , CJBB3139K , CJBD3020 , CJBE5005 .

History: CJBA3134K | AP6680GM | TPP65R600C | APT1003RBLL | HGN028NE6A | 2N5199 | APT1003RSLL

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