CJAE2002 Specs and Replacement

Type Designator: CJAE2002

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 18 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.9 nS

Cossⓘ - Output Capacitance: 315 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: DFNWB3X3-8-L

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CJAE2002 datasheet

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CJAE2002

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB3 3-8 -L Plastic-Encapsulate MOSFETS CJAE2002 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)TYP DFNWB3 3-8 -L m @4.5V 4.4 4.5m @4.0V 18V 15A 4.6 m @3.8V m @3.1 V 4.9 5.4m @2.5V DESCRIPTION The CJAE2002 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This d... See More ⇒

Detailed specifications: CJAC20N03, CJAC20N10, CJAC40N04, CJAC50P03, CJAC70N03, CJAC75SN10, CJAC80N03, CJAC90SN12, SPP20N60C3, CJBA3134K, CJBA3139K, CJBA3541K, CJBA7002K, CJBB3134K, CJBB3139K, CJBD3020, CJBE5005

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.