CJAE2002 MOSFET. Datasheet pdf. Equivalent
Type Designator: CJAE2002
Marking Code: 2002
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 26.5 nC
trⓘ - Rise Time: 8.9 nS
Cossⓘ - Output Capacitance: 315 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: DFNWB3X3-8-L
CJAE2002 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CJAE2002 Datasheet (PDF)
cjae2002.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB33-8 -L Plastic-Encapsulate MOSFETS CJAE2002 Dual N-Channel MOSFETIDV(BR)DSS RDS(on)TYP DFNWB33-8 -Lm@4.5V4.4 4.5m@4.0V18V 15A4.6 m@3.8Vm@3.1V4.95.4m@2.5VDESCRIPTION The CJAE2002 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This d
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: HFW50N06 | BUK7214-75B
History: HFW50N06 | BUK7214-75B
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