CJBD3020 Specs and Replacement

Type Designator: CJBD3020

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 max nS

Cossⓘ - Output Capacitance: 138 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: PDFNWB3.3X3.3-8L-B

CJBD3020 substitution

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CJBD3020 datasheet

 ..1. Size:2049K  1
 cjbd3020.pdf pdf_icon

CJBD3020

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L-B Plastic-Encapsulate MOSFETS N-Channel Power MOSFET CJBD3020 ID V(BR)DSS RDS(on)TYP PD F NWB3.3 3.3-8L-B 9.5m @10V 30 V 20A 14.5m @4.5V DESCRIPTION The CJBD3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications... See More ⇒

 ..2. Size:2049K  jiangsu
 cjbd3020.pdf pdf_icon

CJBD3020

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L-B Plastic-Encapsulate MOSFETS N-Channel Power MOSFET CJBD3020 ID V(BR)DSS RDS(on)TYP PD F NWB3.3 3.3-8L-B 9.5m @10V 30 V 20A 14.5m @4.5V DESCRIPTION The CJBD3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications... See More ⇒

Detailed specifications: CJAC90SN12, CJAE2002, CJBA3134K, CJBA3139K, CJBA3541K, CJBA7002K, CJBB3134K, CJBB3139K, IRF1010E, CJBE5005, CJBM3020, CEC2088E, CEC3172, CED20N02, CEU20N02, CED25N02, CEU25N02

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.