CJBE5005 PDF and Equivalents Search

 

CJBE5005 Specs and Replacement

Type Designator: CJBE5005

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.2 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: DFNWB3X3-8L-K

CJBE5005 substitution

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CJBE5005 datasheet

 ..1. Size:1555K  jiangsu
 cjbe5005.pdf pdf_icon

CJBE5005

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB3X3-8L-K Plastic-Encapsulate MOSFETS CJBE5005 Dual N-Channel MOSFET DFNWB3 3-8L-K ID V(BR)DSS RDS(on)TYP 9.3 m @4.5V m 9.7 @4.0V 10A 20V 10.0m @3.8V m 0.7 @3.1V 1 m 12.5 @2.5V DESCRIPTION The CJBE5005 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected.... See More ⇒

Detailed specifications: CJAE2002, CJBA3134K, CJBA3139K, CJBA3541K, CJBA7002K, CJBB3134K, CJBB3139K, CJBD3020, IRFB3607, CJBM3020, CEC2088E, CEC3172, CED20N02, CEU20N02, CED25N02, CEU25N02, CEM2192

Keywords - CJBE5005 MOSFET specs

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