All MOSFET. CJBE5005 Datasheet

 

CJBE5005 Datasheet and Replacement


   Type Designator: CJBE5005
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: DFNWB3X3-8L-K
 

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CJBE5005 Datasheet (PDF)

 ..1. Size:1555K  jiangsu
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CJBE5005

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB3X3-8L-K Plastic-Encapsulate MOSFETS CJBE5005 Dual N-Channel MOSFETDFNWB33-8L-KIDV(BR)DSS RDS(on)TYP 9.3 m@4.5Vm9.7@4.0V10A20V 10.0m@3.8Vm0.7 @3.1V1m 12.5@2.5VDESCRIPTION The CJBE5005 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected.

Datasheet: CJAE2002 , CJBA3134K , CJBA3139K , CJBA3541K , CJBA7002K , CJBB3134K , CJBB3139K , CJBD3020 , AON7506 , CJBM3020 , CEC2088E , CEC3172 , CED20N02 , CEU20N02 , CED25N02 , CEU25N02 , CEM2192 .

History: SI4622DY | VBZL80N03

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