All MOSFET. CEC2088E Datasheet

 

CEC2088E Datasheet and Replacement


   Type Designator: CEC2088E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 17.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 275 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: DFN3X3
 

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CEC2088E Datasheet (PDF)

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CEC2088E

CEC2088EN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESD D20V, 36A, RDS(ON) = 9m @VGS = 4.5V. RDS(ON) = 12m @VGS = 2.5V.G1 G2 RDS(ON) = 16m @VGS = 1.8V.Super High dense cell design for extremely low RDS(ON).High power and current handing capability.S1 S2*Typical value by designLead-free plating ; RoHS compliant.ESD Protected: 2000 V. D2

Datasheet: CJBA3139K , CJBA3541K , CJBA7002K , CJBB3134K , CJBB3139K , CJBD3020 , CJBE5005 , CJBM3020 , AO4407 , CEC3172 , CED20N02 , CEU20N02 , CED25N02 , CEU25N02 , CEM2192 , CEM4052 , CEM6056L .

History: NTHS5445T1 | APT4080BN | 25N10G-TM3-T

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