CEC2088E Specs and Replacement
Type Designator: CEC2088E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 17.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 275 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: DFN3X3
CEC2088E substitution
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CEC2088E datasheet
cec2088e.pdf
CEC2088E N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES D D 20V, 36A, RDS(ON) = 9m @VGS = 4.5V. RDS(ON) = 12m @VGS = 2.5V. G1 G2 RDS(ON) = 16m @VGS = 1.8V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. S1 S2 *Typical value by design Lead-free plating ; RoHS compliant. ESD Protected 2000 V. D2 ... See More ⇒
Detailed specifications: CJBA3139K, CJBA3541K, CJBA7002K, CJBB3134K, CJBB3139K, CJBD3020, CJBE5005, CJBM3020, IRF530, CEC3172, CED20N02, CEU20N02, CED25N02, CEU25N02, CEM2192, CEM4052, CEM6056L
Keywords - CEC2088E MOSFET specs
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