All MOSFET. CEC3172 Datasheet

 

CEC3172 Datasheet and Replacement


   Type Designator: CEC3172
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DFN3X3
 

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CEC3172 Datasheet (PDF)

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CEC3172

CEC3172N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESD30V, 26A, RDS(ON) = 20m @VGS = 10V. RDS(ON) = 32m @VGS = 4.5V.Super High dense cell design for extremely low RDS(ON).GHigh power and current handing capability.Lead-free plating ; RoHS compliant.SD D D D5 6 7 8Bottom ViewDFN3*34 3 2 1G S S SABSOLUTE MAXIMUM RATINGS TA = 25 C unl

Datasheet: CJBA3541K , CJBA7002K , CJBB3134K , CJBB3139K , CJBD3020 , CJBE5005 , CJBM3020 , CEC2088E , IRLB4132 , CED20N02 , CEU20N02 , CED25N02 , CEU25N02 , CEM2192 , CEM4052 , CEM6056L , CEM9288 .

History: FQH90N15 | P2610BT | DMN3035LWN | AM2300N | LP2301BLT1G | IPB34CN10N | FQD2N50TF

Keywords - CEC3172 MOSFET datasheet

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