All MOSFET. CEC3172 Datasheet

 

CEC3172 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEC3172
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 26 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DFN3X3

 CEC3172 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEC3172 Datasheet (PDF)

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 cec3172.pdf

CEC3172 CEC3172

CEC3172N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESD30V, 26A, RDS(ON) = 20m @VGS = 10V. RDS(ON) = 32m @VGS = 4.5V.Super High dense cell design for extremely low RDS(ON).GHigh power and current handing capability.Lead-free plating ; RoHS compliant.SD D D D5 6 7 8Bottom ViewDFN3*34 3 2 1G S S SABSOLUTE MAXIMUM RATINGS TA = 25 C unl

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STB80NF55-06 | SM4421

 

 
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