CEC3172 PDF and Equivalents Search

 

CEC3172 Specs and Replacement

Type Designator: CEC3172

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 17 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: DFN3X3

CEC3172 substitution

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CEC3172 datasheet

 ..1. Size:411K  cet
 cec3172.pdf pdf_icon

CEC3172

CEC3172 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES D 30V, 26A, RDS(ON) = 20m @VGS = 10V. RDS(ON) = 32m @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). G High power and current handing capability. Lead-free plating ; RoHS compliant. S D D D D 5 6 7 8 Bottom View DFN3*3 4 3 2 1 G S S S ABSOLUTE MAXIMUM RATINGS TA = 25 C unl... See More ⇒

Detailed specifications: CJBA3541K, CJBA7002K, CJBB3134K, CJBB3139K, CJBD3020, CJBE5005, CJBM3020, CEC2088E, CS150N03A8, CED20N02, CEU20N02, CED25N02, CEU25N02, CEM2192, CEM4052, CEM6056L, CEM9288

Keywords - CEC3172 MOSFET specs

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