CED25N02 MOSFET. Datasheet pdf. Equivalent
Type Designator: CED25N02
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 25 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 11 nC
Rise Time (tr): 14 nS
Drain-Source Capacitance (Cd): 115 pF
Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm
Package: TO251
CED25N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CED25N02 Datasheet (PDF)
0.1. ced25n02 ceu25n02.pdf 
Size:272K _cet
CED25N02/CEU25N02N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 25A, RDS(ON) = 23m @VGS = 4.5V. RDS(ON) = 33m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PA
8.1. ceu25n15l ced25n15l.pdf Size:410K _cet
CED25N15L/CEU25N15LN-Channel Enhancement Mode Field Effect TransistorFEATURES150V, 25A, RDS(ON) = 70m @VGS = 10V. RDS(ON) = 80m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXI
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