CEM4052 Datasheet and Replacement
Type Designator: CEM4052
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 385 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
Package: SO8
CEM4052 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEM4052 Datasheet (PDF)
cem4052.pdf
CEM4052 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 16A, RDS(ON) = 6.6m @VGS = 10V. RDS(ON) = 10m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis... See More ⇒
cem4042.pdf
CEM4042 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 40V, 18A, RDS(ON) = 5.1m @VGS = 10V. RDS(ON) = 7.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C un... See More ⇒
cem4042.pdf
CEM4042 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0045 at VGS = 10 V 18 100 % Rg and UIS Tested 40 8 nC 0.0065 at VGS = 4.5 V 14.5 APPLICATIONS Notebook CPU Core - High-Side Switch D SO-8 SD 1 8 G SD 2 7 SD 3 6 GD... See More ⇒
Datasheet: CJBM3020 , CEC2088E , CEC3172 , CED20N02 , CEU20N02 , CED25N02 , CEU25N02 , CEM2192 , AO4407 , CEM6056L , CEM9288 , CEN2307A , CEN2321A , CEB6086 , CEF9060N , CEB93A3 , CES2322 .
Keywords - CEM4052 MOSFET datasheet
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