CEM4052 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEM4052
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 16 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 67 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 385 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0066 Ohm
Package: SO8
CEM4052 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEM4052 Datasheet (PDF)
0.1. cem4052.pdf 
Size:246K _cet
CEM4052N-Channel Enhancement Mode Field Effect TransistorFEATURES40V, 16A, RDS(ON) = 6.6m @VGS = 10V. RDS(ON) = 10m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis
9.1. cem4042.pdf Size:400K _cet
CEM4042N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES40V, 18A, RDS(ON) = 5.1m @VGS = 10V. RDS(ON) = 7.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C un
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