CEM4052 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEM4052
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 67 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 385 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
Package: SO8
CEM4052 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEM4052 Datasheet (PDF)
cem4052.pdf
CEM4052N-Channel Enhancement Mode Field Effect TransistorFEATURES40V, 16A, RDS(ON) = 6.6m @VGS = 10V. RDS(ON) = 10m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis
cem4042.pdf
CEM4042N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES40V, 18A, RDS(ON) = 5.1m @VGS = 10V. RDS(ON) = 7.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C un
cem4042.pdf
CEM4042www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0045 at VGS = 10 V 18 100 % Rg and UIS Tested40 8 nC0.0065 at VGS = 4.5 V 14.5APPLICATIONS Notebook CPU Core- High-Side SwitchD SO-8 SD1 8 G SD2 7 SD3 6 GD
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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