CEM4052 Datasheet and Replacement
Type Designator: CEM4052
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 385 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
Package: SO8
CEM4052 substitution
CEM4052 Datasheet (PDF)
cem4052.pdf

CEM4052N-Channel Enhancement Mode Field Effect TransistorFEATURES40V, 16A, RDS(ON) = 6.6m @VGS = 10V. RDS(ON) = 10m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis
cem4042.pdf

CEM4042N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES40V, 18A, RDS(ON) = 5.1m @VGS = 10V. RDS(ON) = 7.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C un
cem4042.pdf

CEM4042www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0045 at VGS = 10 V 18 100 % Rg and UIS Tested40 8 nC0.0065 at VGS = 4.5 V 14.5APPLICATIONS Notebook CPU Core- High-Side SwitchD SO-8 SD1 8 G SD2 7 SD3 6 GD
Datasheet: CJBM3020 , CEC2088E , CEC3172 , CED20N02 , CEU20N02 , CED25N02 , CEU25N02 , CEM2192 , P60NF06 , CEM6056L , CEM9288 , CEN2307A , CEN2321A , CEB6086 , CEF9060N , CEB93A3 , CES2322 .
History: NVMFD020N06C | AFP8452 | HM120N04D | IPD90N04S3-H4
Keywords - CEM4052 MOSFET datasheet
CEM4052 cross reference
CEM4052 equivalent finder
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CEM4052 substitution
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History: NVMFD020N06C | AFP8452 | HM120N04D | IPD90N04S3-H4



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