CEM4052 Datasheet. Specs and Replacement

Type Designator: CEM4052  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 385 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm

Package: SO8

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CEM4052 datasheet

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CEM4052

CEM4052 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 16A, RDS(ON) = 6.6m @VGS = 10V. RDS(ON) = 10m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis... See More ⇒

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CEM4052

CEM4042 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 40V, 18A, RDS(ON) = 5.1m @VGS = 10V. RDS(ON) = 7.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C un... See More ⇒

 9.2. Size:882K  cn vbsemi
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CEM4052

CEM4042 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0045 at VGS = 10 V 18 100 % Rg and UIS Tested 40 8 nC 0.0065 at VGS = 4.5 V 14.5 APPLICATIONS Notebook CPU Core - High-Side Switch D SO-8 SD 1 8 G SD 2 7 SD 3 6 GD... See More ⇒

Detailed specifications: CJBM3020, CEC2088E, CEC3172, CED20N02, CEU20N02, CED25N02, CEU25N02, CEM2192, AO4407, CEM6056L, CEM9288, CEN2307A, CEN2321A, CEB6086, CEF9060N, CEB93A3, CES2322

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