CEM4052 - параметры транзистора MOSFET, его аналоги, datasheet

CEM4052 Datasheet (PDF)

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CEM4052N-Channel Enhancement Mode Field Effect TransistorFEATURES40V, 16A, RDS(ON) = 6.6m @VGS = 10V. RDS(ON) = 10m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis

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CEM4042N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES40V, 18A, RDS(ON) = 5.1m @VGS = 10V. RDS(ON) = 7.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C un

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CEM4042www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0045 at VGS = 10 V 18 100 % Rg and UIS Tested40 8 nC0.0065 at VGS = 4.5 V 14.5APPLICATIONS Notebook CPU Core- High-Side SwitchD SO-8 SD1 8 G SD2 7 SD3 6 GD

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