All MOSFET. CEM9288 Datasheet


CEM9288 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEM9288

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 18 nC

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 205 pF

Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm

Package: SO8

CEM9288 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


CEM9288 Datasheet (PDF)

0.1. cem9288.pdf Size:381K _cet


CEM9288N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 10A, RDS(ON) = 13m @VGS = 4.5V. RDS(ON) = 20m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.D1 D1 D2 D2Surface mount Package.8 7 6 5SO-811 2 3 4S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS T

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