All MOSFET. CEM9288 Datasheet

 

CEM9288 Datasheet and Replacement


   Type Designator: CEM9288
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SO8
 

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CEM9288 Datasheet (PDF)

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CEM9288

CEM9288N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 10A, RDS(ON) = 13m @VGS = 4.5V. RDS(ON) = 20m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.D1 D1 D2 D2Surface mount Package.8 7 6 5SO-811 2 3 4S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS T

Datasheet: CEC3172 , CED20N02 , CEU20N02 , CED25N02 , CEU25N02 , CEM2192 , CEM4052 , CEM6056L , 10N65 , CEN2307A , CEN2321A , CEB6086 , CEF9060N , CEB93A3 , CES2322 , CEZ3P08 , CEZ3R04 .

History: VS4618AP

Keywords - CEM9288 MOSFET datasheet

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