All MOSFET. CEM9288 Datasheet

 

CEM9288 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEM9288
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SO8

 CEM9288 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM9288 Datasheet (PDF)

 ..1. Size:381K  cet
 cem9288.pdf

CEM9288 CEM9288

CEM9288N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 10A, RDS(ON) = 13m @VGS = 4.5V. RDS(ON) = 20m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.D1 D1 D2 D2Surface mount Package.8 7 6 5SO-811 2 3 4S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS T

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SK1132 | PSMN4R5-40BS

 

 
Back to Top