CEM9288 Specs and Replacement
Type Designator: CEM9288
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 205 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SO8
CEM9288 substitution
CEM9288 Specs
cem9288.pdf
CEM9288 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 10A, RDS(ON) = 13m @VGS = 4.5V. RDS(ON) = 20m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D1 D1 D2 D2 Surface mount Package. 8 7 6 5 SO-8 1 1 2 3 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS T... See More ⇒
Detailed specifications: CEC3172 , CED20N02 , CEU20N02 , CED25N02 , CEU25N02 , CEM2192 , CEM4052 , CEM6056L , 4N60 , CEN2307A , CEN2321A , CEB6086 , CEF9060N , CEB93A3 , CES2322 , CEZ3P08 , CEZ3R04 .
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
