CEN2321A Datasheet. Specs and Replacement
Type Designator: CEN2321A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT23
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CEN2321A substitution
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CEN2321A datasheet
cen2321a.pdf
CEN2321A PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -3.7A, RDS(ON) = 60m @VGS = -4.5V. RDS(ON) = 80m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit... See More ⇒
cen2307a.pdf
CEN2307A P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -3.2A, RDS(ON) = 78m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23-T ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Lim... See More ⇒
cen2301.pdf
CEN2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.7A, RDS(ON) = 110m @VGS = -4.5V. RDS(ON) = 160m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23-T package. G D S G S SOT-23-T ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units ... See More ⇒
Detailed specifications: CEU20N02, CED25N02, CEU25N02, CEM2192, CEM4052, CEM6056L, CEM9288, CEN2307A, 10N65, CEB6086, CEF9060N, CEB93A3, CES2322, CEZ3P08, CEZ3R04, CJCD2003, CJCD2004
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