CEF9060N PDF and Equivalents Search

 

CEF9060N Specs and Replacement

Type Designator: CEF9060N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.9 nS

Cossⓘ - Output Capacitance: 765 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO220F

CEF9060N substitution

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CEF9060N datasheet

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CEF9060N

CEP9060N/CEB9060N CEF9060N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP9060N 55V 10.5m 90A 10V CEB9060N 55V 10.5m 90A 10V CEF9060N 55V 10.5m 90A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for ... See More ⇒

Detailed specifications: CEU25N02, CEM2192, CEM4052, CEM6056L, CEM9288, CEN2307A, CEN2321A, CEB6086, 10N65, CEB93A3, CES2322, CEZ3P08, CEZ3R04, CJCD2003, CJCD2004, CJCD2005, CJCD2007

Keywords - CEF9060N MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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