All MOSFET. CEF9060N Datasheet

 

CEF9060N Datasheet and Replacement


   Type Designator: CEF9060N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11.9 nS
   Cossⓘ - Output Capacitance: 765 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO220F
 

 CEF9060N substitution

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CEF9060N Datasheet (PDF)

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CEF9060N

CEP9060N/CEB9060N CEF9060NN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP9060N 55V 10.5m 90A 10VCEB9060N 55V 10.5m 90A 10VCEF9060N 55V 10.5m 90A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package & TO-220F full-pak for

Datasheet: CEU25N02 , CEM2192 , CEM4052 , CEM6056L , CEM9288 , CEN2307A , CEN2321A , CEB6086 , 10N65 , CEB93A3 , CES2322 , CEZ3P08 , CEZ3R04 , CJCD2003 , CJCD2004 , CJCD2005 , CJCD2007 .

History: 4N65KL-TMS4-T

Keywords - CEF9060N MOSFET datasheet

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