All MOSFET. CEF9060N Datasheet


CEF9060N MOSFET. Datasheet pdf. Equivalent

Type Designator: CEF9060N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 49 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 70 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 68.1 nC

Rise Time (tr): 11.9 nS

Drain-Source Capacitance (Cd): 765 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0105 Ohm

Package: TO220F

CEF9060N Transistor Equivalent Substitute - MOSFET Cross-Reference Search


CEF9060N Datasheet (PDF)

0.1. cep9060n ceb9060n cef9060n.pdf Size:396K _cet


CEP9060N/CEB9060N CEF9060NN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP9060N 55V 10.5m 90A 10VCEB9060N 55V 10.5m 90A 10VCEF9060N 55V 10.5m 90A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package & TO-220F full-pak for

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