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CEB93A3 Spec and Replacement


   Type Designator: CEB93A3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 980 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO263

 CEB93A3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEB93A3 Specs

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CEB93A3

CEP93A3/CEB93A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 150A, RDS(ON) = 3.0 m @VGS = 10V. RDS(ON) = 6.0 m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS... See More ⇒

Detailed specifications: CEM2192 , CEM4052 , CEM6056L , CEM9288 , CEN2307A , CEN2321A , CEB6086 , CEF9060N , 5N60 , CES2322 , CEZ3P08 , CEZ3R04 , CJCD2003 , CJCD2004 , CJCD2005 , CJCD2007 , CJDE8404 .

History: SI6423DQ

Keywords - CEB93A3 MOSFET specs

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