CEB93A3 Datasheet. Specs and Replacement

Type Designator: CEB93A3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 980 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO263

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CEB93A3 datasheet

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CEB93A3

CEP93A3/CEB93A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 150A, RDS(ON) = 3.0 m @VGS = 10V. RDS(ON) = 6.0 m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS... See More ⇒

Detailed specifications: CEM2192, CEM4052, CEM6056L, CEM9288, CEN2307A, CEN2321A, CEB6086, CEF9060N, 5N60, CES2322, CEZ3P08, CEZ3R04, CJCD2003, CJCD2004, CJCD2005, CJCD2007, CJDE8404

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.