All MOSFET. CEB93A3 Datasheet


CEB93A3 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEB93A3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 150 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 60 nC

Rise Time (tr): 19 nS

Drain-Source Capacitance (Cd): 980 pF

Maximum Drain-Source On-State Resistance (Rds): 0.003 Ohm

Package: TO263

CEB93A3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


CEB93A3 Datasheet (PDF)

0.1. cep93a3 ceb93a3.pdf Size:626K _cet


CEP93A3/CEB93A3N-Channel Enhancement Mode Field Effect Transistor FEATURES30V, 150A, RDS(ON) = 3.0 m @VGS = 10V. RDS(ON) = 6.0 m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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