CEB93A3 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEB93A3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 150 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 60 nC
Rise Time (tr): 19 nS
Drain-Source Capacitance (Cd): 980 pF
Maximum Drain-Source On-State Resistance (Rds): 0.003 Ohm
Package: TO263
CEB93A3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEB93A3 Datasheet (PDF)
0.1. cep93a3 ceb93a3.pdf 
Size:626K _cet
CEP93A3/CEB93A3N-Channel Enhancement Mode Field Effect Transistor FEATURES30V, 150A, RDS(ON) = 3.0 m @VGS = 10V. RDS(ON) = 6.0 m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
