CES2322 MOSFET. Datasheet pdf. Equivalent
Type Designator: CES2322
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 6.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 10 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 110 pF
Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm
Package: SOT23
CES2322 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CES2322 Datasheet (PDF)
0.1. ces2322.pdf 
Size:919K _cet
CES2322N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 6.2A, RDS(ON) = 22m @VGS = 4.5V. RDS(ON) = 30m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Lead-free plating ; RoHS compliant.DRugged and reliable.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit Units
8.1. ces2320.pdf Size:478K _cet
CES2320N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 5.2A, RDS(ON) = 29m @VGS = 10V. RDS(ON) = 45m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Lead free product is acquired.DRugged and reliable.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Vol
8.2. ces2321a.pdf Size:365K _cet
CES2321APRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -3.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 75m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit
8.3. ces2323.pdf Size:387K _cet
CES2323P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -4.2A, RDS(ON) = 48m @VGS = -10V. RDS(ON) = 80m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source
8.4. ces2321.pdf Size:378K _cet
CES2321P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -3.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 62m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Sourc
8.5. ces2324.pdf Size:453K _cet
CES2324N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 4.2A, RDS(ON) = 45m @VGS = 4.5V. RDS(ON) = 80m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Lead free product is acquired.DRugged and reliable.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Vo
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
