All MOSFET. CES2322 Datasheet

 

CES2322 Datasheet and Replacement


   Type Designator: CES2322
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SOT23
 

 CES2322 substitution

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CES2322 Datasheet (PDF)

 ..1. Size:919K  cet
ces2322.pdf pdf_icon

CES2322

CES2322N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 6.2A, RDS(ON) = 22m @VGS = 4.5V. RDS(ON) = 30m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Lead-free plating ; RoHS compliant.DRugged and reliable.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit Units

 8.1. Size:387K  cet
ces2323.pdf pdf_icon

CES2322

CES2323P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -4.2A, RDS(ON) = 48m @VGS = -10V. RDS(ON) = 80m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source

 8.2. Size:453K  cet
ces2324.pdf pdf_icon

CES2322

CES2324N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 4.2A, RDS(ON) = 45m @VGS = 4.5V. RDS(ON) = 80m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Lead free product is acquired.DRugged and reliable.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Vo

 8.3. Size:365K  cet
ces2321a.pdf pdf_icon

CES2322

CES2321APRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -3.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 75m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit

Datasheet: CEM4052 , CEM6056L , CEM9288 , CEN2307A , CEN2321A , CEB6086 , CEF9060N , CEB93A3 , SKD502T , CEZ3P08 , CEZ3R04 , CJCD2003 , CJCD2004 , CJCD2005 , CJCD2007 , CJDE8404 , CJE3134K .

History: IXKC13N80C

Keywords - CES2322 MOSFET datasheet

 CES2322 cross reference
 CES2322 equivalent finder
 CES2322 lookup
 CES2322 substitution
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