CJCD2007 PDF and Equivalents Search

 

CJCD2007 Specs and Replacement

Type Designator: CJCD2007

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: DFNWB2X3-6L-C

CJCD2007 substitution

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CJCD2007 datasheet

 ..1. Size:1507K  jiangsu
 cjcd2007.pdf pdf_icon

CJCD2007

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2 3-6L-C Plastic-Encapsulate MOSFETS DFNWB2 3-6L-C CJCD2007 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)TYP m 12.5 @4.5V m 13 @4.0V 20V 8A m @3.8V 13.5 m @3.1V 14.5 m 17 @2.5V DESCRIPTION The CJCD2007 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected... See More ⇒

 7.1. Size:1794K  jiangsu
 cjcd2005.pdf pdf_icon

CJCD2007

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2 3-6L-C Plastic-Encapsulate MOSFETS DFNWB2 3-6L-C CJCD2005 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)TYP m @4.5V 9 @4.0V m 9.5 8A 20V 9.7m @3.8V m @3.1V 10.6 12.5 m @2.5V DESCRIPTION The CJCD2005 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This dev... See More ⇒

 7.2. Size:1698K  jiangsu
 cjcd2004.pdf pdf_icon

CJCD2007

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2 3-6L-C Plastic-Encapsulate MOSFETS DFNWB2 3-6L-C CJCD2004 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)TYP m 7.3 @4.5V m 7.6 @4.0V 20V 10A 7.8m @3.8V 8.2m @3.1 V m 9.0 @2.5V DESCRIPTION The CJCD2004 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected... See More ⇒

 7.3. Size:1603K  jiangsu
 cjcd2003.pdf pdf_icon

CJCD2007

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2 3-6L-C Plastic-Encapsulate MOSFETS DFNWB2 3-6L-C CJCD2003 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)TYP 6.2 m @4.5V m 6.4 @4.0V 18V 10A m 6.8 @3.8V V 7.2 m @3.1 8.2 m @2.5V DESCRIPTION The CJCD2003 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected.... See More ⇒

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Detailed specifications: CEF9060N, CEB93A3, CES2322, CEZ3P08, CEZ3R04, CJCD2003, CJCD2004, CJCD2005, IRF2807, CJDE8404, CJE3134K, CJE3139K, CJFB30H20, CJK1211, CJK1508, CJK2009, CJK2333

Keywords - CJCD2007 MOSFET specs

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