CJCD2007 Datasheet and Replacement. Cross Reference Search

CJCD2007 Datasheet (PDF)

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB23-6L-C Plastic-Encapsulate MOSFETS DFNWB23-6L-CCJCD2007 Dual N-Channel MOSFETIDV(BR)DSS RDS(on)TYP m12.5 @4.5V m13 @4.0V20V8Am@3.8V 13.5m@3.1V 14.5m 17 @2.5VDESCRIPTION The CJCD2007 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDDFNWB23-6L-C Plastic-Encapsulate MOSFETS DFNWB23-6L-CCJCD2005 Dual N-Channel MOSFETIDV(BR)DSS RDS(on)TYP m@4.5V9@4.0V m9.58A20V 9.7m@3.8Vm@3.1V10.612.5m@2.5VDESCRIPTION The CJCD2005 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This dev

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDDFNWB23-6L-C Plastic-Encapsulate MOSFETS DFNWB23-6L-CCJCD2004 Dual N-Channel MOSFET IDV(BR)DSS RDS(on)TYP m 7.3@4.5V m 7.6 @4.0V20V10A7.8m@3.8V8.2m@3.1Vm9.0@2.5VDESCRIPTION The CJCD2004 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDDFNWB23-6L-C Plastic-Encapsulate MOSFETS DFNWB23-6L-CCJCD2003 Dual N-Channel MOSFETIDV(BR)DSS RDS(on)TYP 6.2 m@4.5V m 6.4 @4.0V18V10Am 6.8 @3.8VV 7.2 m@3.1 8.2 m@2.5VDESCRIPTION The CJCD2003 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected.

Datasheet: CEF9060N , CEB93A3 , CES2322 , CEZ3P08 , CEZ3R04 , CJCD2003 , CJCD2004 , CJCD2005 , IRFB31N20D , CJDE8404 , CJE3134K , CJE3139K , CJFB30H20 , CJK1211 , CJK1508 , CJK2009 , CJK2333 .