CJDE8404 Datasheet and Replacement
Type Designator: CJDE8404
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: DFNWB3X3-8L-U
CJDE8404 substitution
CJDE8404 Datasheet (PDF)
cjde8404.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB3X3-8L-U Plastic-Encapsulate MOSFETS CJDE8404 N-Channel + P-Channel MOSFETDFNWB33-8L-UProduct Summary V R I (BR)DSS DS(on)MAX D50m@-10V -30V -4A 80m@-4.5V 50m@10V 30V 5A 80m@4.5V Feature Low drain-source ON-resistance High forward transfer admittance Low leakage current Enhancement mo
Datasheet: CEB93A3 , CES2322 , CEZ3P08 , CEZ3R04 , CJCD2003 , CJCD2004 , CJCD2005 , CJCD2007 , IRF2807 , CJE3134K , CJE3139K , CJFB30H20 , CJK1211 , CJK1508 , CJK2009 , CJK2333 , CJK3400A .
History: STP11NM50N | TSM3N80CP | WST2088 | SDF02N65 | AOTF12N60 | MTE55N10FP | AP2311GN
Keywords - CJDE8404 MOSFET datasheet
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History: STP11NM50N | TSM3N80CP | WST2088 | SDF02N65 | AOTF12N60 | MTE55N10FP | AP2311GN



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