CJFB30H20 PDF and Equivalents Search

 

CJFB30H20 Specs and Replacement

Type Designator: CJFB30H20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 max nS

Cossⓘ - Output Capacitance: 138 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: DFNWB5X6-8L-E

CJFB30H20 substitution

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CJFB30H20 datasheet

 ..1. Size:2140K  jiangsu
 cjfb30h20.pdf pdf_icon

CJFB30H20

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB5 6-8L-E Plastic-Encapsulate MOSFETS CJFB30H20 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP D F NWB5x6-8L-E 8.5m @10V 30 V 20A 12m @4.5V DESCRIPTION The CJFB30H20 uses advanced trench technology and design 1 to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES... See More ⇒

Detailed specifications: CEZ3R04, CJCD2003, CJCD2004, CJCD2005, CJCD2007, CJDE8404, CJE3134K, CJE3139K, 8N60, CJK1211, CJK1508, CJK2009, CJK2333, CJK3400A, CJK3400AH, CJK3401A, CJK3401AH

Keywords - CJFB30H20 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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