All MOSFET. CJFB30H20 Datasheet

 

CJFB30H20 Datasheet and Replacement


   Type Designator: CJFB30H20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8(max) nS
   Cossⓘ - Output Capacitance: 138 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DFNWB5X6-8L-E
 

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CJFB30H20 Datasheet (PDF)

 ..1. Size:2140K  jiangsu
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CJFB30H20

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB56-8L-E Plastic-Encapsulate MOSFETS CJFB30H20 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPD F NWB5x6-8L-E8.5m@10V30 V20A12m@4.5VDESCRIPTION The CJFB30H20 uses advanced trench technology and design 1to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES

Datasheet: CEZ3R04 , CJCD2003 , CJCD2004 , CJCD2005 , CJCD2007 , CJDE8404 , CJE3134K , CJE3139K , K2611 , CJK1211 , CJK1508 , CJK2009 , CJK2333 , CJK3400A , CJK3400AH , CJK3401A , CJK3401AH .

History: SVS60R360FJDE3

Keywords - CJFB30H20 MOSFET datasheet

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