CJFB30H20 Datasheet and Replacement
Type Designator: CJFB30H20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8(max) nS
Cossⓘ - Output Capacitance: 138 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: DFNWB5X6-8L-E
CJFB30H20 substitution
CJFB30H20 Datasheet (PDF)
cjfb30h20.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB56-8L-E Plastic-Encapsulate MOSFETS CJFB30H20 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPD F NWB5x6-8L-E8.5m@10V30 V20A12m@4.5VDESCRIPTION The CJFB30H20 uses advanced trench technology and design 1to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
Datasheet: CEZ3R04 , CJCD2003 , CJCD2004 , CJCD2005 , CJCD2007 , CJDE8404 , CJE3134K , CJE3139K , 8N60 , CJK1211 , CJK1508 , CJK2009 , CJK2333 , CJK3400A , CJK3400AH , CJK3401A , CJK3401AH .
History: CJK1508 | SE12060GA | SI2323DS-T1
Keywords - CJFB30H20 MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: CJK1508 | SE12060GA | SI2323DS-T1
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