All MOSFET. CJK1211 Datasheet

 

CJK1211 Datasheet and Replacement


   Type Designator: CJK1211
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35(max) nS
   Cossⓘ - Output Capacitance: 680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOT23
 

 CJK1211 substitution

   - MOSFET ⓘ Cross-Reference Search

 

CJK1211 Datasheet (PDF)

 ..1. Size:1759K  jiangsu
 cjk1211.pdf pdf_icon

CJK1211

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK1211 P-Channel Enhancement Mode Field Effect TransistorID V(BR)DSS RDS(on)MAX SOT-23-3L m25@-4.5V-12V -11Am@-2.5V301. GATE 2. SOURCE 3. DRAIN Feature Application Advanced trench MOSFET process technology PWM application Ultra low on-resistance with low g

Datasheet: CJCD2003 , CJCD2004 , CJCD2005 , CJCD2007 , CJDE8404 , CJE3134K , CJE3139K , CJFB30H20 , MMIS60R580P , CJK1508 , CJK2009 , CJK2333 , CJK3400A , CJK3400AH , CJK3401A , CJK3401AH , CJK8804 .

History: SI5513CD | BRF5N65 | SML20J97 | AS3409 | ZXMP10A17E6Q | 2SK2445 | SM1A63NHK

Keywords - CJK1211 MOSFET datasheet

 CJK1211 cross reference
 CJK1211 equivalent finder
 CJK1211 lookup
 CJK1211 substitution
 CJK1211 replacement

 

 
Back to Top

 


 
.