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CJK1211 Specs and Replacement

Type Designator: CJK1211

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 max nS

Cossⓘ - Output Capacitance: 680 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOT23

CJK1211 substitution

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CJK1211 datasheet

 ..1. Size:1759K  jiangsu
 cjk1211.pdf pdf_icon

CJK1211

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK1211 P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L m 25 @-4.5V -12V -11A m @-2.5V 30 1. GATE 2. SOURCE 3. DRAIN Feature Application Advanced trench MOSFET process technology PWM application Ultra low on-resistance with low g... See More ⇒

Detailed specifications: CJCD2003, CJCD2004, CJCD2005, CJCD2007, CJDE8404, CJE3134K, CJE3139K, CJFB30H20, P60NF06, CJK1508, CJK2009, CJK2333, CJK3400A, CJK3400AH, CJK3401A, CJK3401AH, CJK8804

Keywords - CJK1211 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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