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CJK2009 Specs and Replacement

Type Designator: CJK2009

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 max nS

Cossⓘ - Output Capacitance: 670 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOT23

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CJK2009 datasheet

 ..1. Size:687K  jiangsu
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CJK2009

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK2009 P-Channel Enhancement Mode Field Effect Transistor SOT-23-3L 3 ID V(BR)DSS RDS(on)MAX m 25 1 @-4.5V -20V -9A 1. BASE 2 m @-2.5V 30 2. EMITTER 3. COLLECTOR Feature Application Advanced trench MOSFET process technology PWM application Ultra low on-resistance wi... See More ⇒

Detailed specifications: CJCD2005, CJCD2007, CJDE8404, CJE3134K, CJE3139K, CJFB30H20, CJK1211, CJK1508, AO3400A, CJK2333, CJK3400A, CJK3400AH, CJK3401A, CJK3401AH, CJK8804, CJL2013, CJL2016

Keywords - CJK2009 MOSFET specs

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