All MOSFET. CJK2009 Datasheet

 

CJK2009 Datasheet and Replacement


   Type Designator: CJK2009
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35(max) nS
   Cossⓘ - Output Capacitance: 670 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOT23
 

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CJK2009 Datasheet (PDF)

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CJK2009

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK2009 P-Channel Enhancement Mode Field Effect TransistorSOT-23-3L 3ID V(BR)DSS RDS(on)MAX m25 1 @-4.5V-20V -9A1. BASE 2m@-2.5V302. EMITTER3. COLLECTORFeature Application Advanced trench MOSFET process technology PWM application Ultra low on-resistance wi

Datasheet: CJCD2005 , CJCD2007 , CJDE8404 , CJE3134K , CJE3139K , CJFB30H20 , CJK1211 , CJK1508 , RU6888R , CJK2333 , CJK3400A , CJK3400AH , CJK3401A , CJK3401AH , CJK8804 , CJL2013 , CJL2016 .

History: 2SK2545

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