All MOSFET. CJK2009 Datasheet

 

CJK2009 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CJK2009
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 35(max) nS
   Cossⓘ - Output Capacitance: 670 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOT23

 CJK2009 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CJK2009 Datasheet (PDF)

 ..1. Size:687K  jiangsu
 cjk2009.pdf

CJK2009 CJK2009

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK2009 P-Channel Enhancement Mode Field Effect TransistorSOT-23-3L 3ID V(BR)DSS RDS(on)MAX m25 1 @-4.5V-20V -9A1. BASE 2m@-2.5V302. EMITTER3. COLLECTORFeature Application Advanced trench MOSFET process technology PWM application Ultra low on-resistance wi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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