All MOSFET. CJL2013 Datasheet

 

CJL2013 Datasheet and Replacement


   Type Designator: CJL2013
   Marking Code: L2013
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOT23-6L
      - MOSFET Cross-Reference Search

 

CJL2013 Datasheet (PDF)

 ..1. Size:1080K  jiangsu
 cjl2013.pdf pdf_icon

CJL2013

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL2013 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)TYPSOT-23-6L 12.2 m@4.5V12.9 m@3.8V20V 6A13.6 m@3.1Vm14.9 @2.5VFEATURE APPLICATION TrenchFET Power MOSFET Battery Protection Excellent RDS(on) Load Switch Low Gate Charge Power Management Hig

 8.1. Size:1969K  jiangsu
 cjl2016.pdf pdf_icon

CJL2013

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL2016 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)TYPSOT-23-6L 15.7 m@4.5V@3.8V16.4m 6A20V@2.5V20 mFEATURE APPLICATION TrenchFET Power MOSFET Battery Protection Excellent RDS(on) Load Switch Low Gate Charge Power Management High Power and Curr

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: 11NM70G-TF1-T | FP11W60C3

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