CJL2013 Specs and Replacement
Type Designator: CJL2013
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SOT23-6L
CJL2013 substitution
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CJL2013 datasheet
cjl2013.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL2013 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)TYP SOT-23-6L 12.2 m @4.5V 12.9 m @3.8V 20V 6A 13.6 m @3.1V m 14.9 @2.5V FEATURE APPLICATION TrenchFET Power MOSFET Battery Protection Excellent RDS(on) Load Switch Low Gate Charge Power Management Hig... See More ⇒
cjl2016.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL2016 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)TYP SOT-23-6L 15.7 m @4.5V @3.8V 16.4m 6A 20 V @2.5V 20 m FEATURE APPLICATION TrenchFET Power MOSFET Battery Protection Excellent RDS(on) Load Switch Low Gate Charge Power Management High Power and Curr... See More ⇒
Detailed specifications: CJK1508, CJK2009, CJK2333, CJK3400A, CJK3400AH, CJK3401A, CJK3401AH, CJK8804, IRF830, CJL2016, CJL2301, CJL2623, CJL8205A, CJM1206, CJMNP517, CJMPD11, CJND2004
Keywords - CJL2013 MOSFET specs
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