SSH60N10A PDF and Equivalents Search

 

SSH60N10A Specs and Replacement

Type Designator: SSH60N10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO3P

SSH60N10A substitution

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SSH60N10A datasheet

 8.1. Size:402K  samsung
ssh60n08.pdf pdf_icon

SSH60N10A

SSH60N10 PCB 24 ... See More ⇒

Detailed specifications: SSH4N70A, SSH4N80AS, SSH4N90AS, SSH5N80A, SSH5N90A, SSH60N06, SSH60N06A, SSH60N10, 4435, SSH6N55, SSH6N60, SSH6N70, SSH6N70A, SSH6N80AS, SSH6N90A, SSH70N10A, SSH7N60A

Keywords - SSH60N10A MOSFET specs

 SSH60N10A cross reference

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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