SSH60N10A Datasheet and Replacement
Type Designator: SSH60N10A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO3P
SSH60N10A substitution
SSH60N10A Datasheet (PDF)
Datasheet: SSH4N70A , SSH4N80AS , SSH4N90AS , SSH5N80A , SSH5N90A , SSH60N06 , SSH60N06A , SSH60N10 , 2SK3568 , SSH6N55 , SSH6N60 , SSH6N70 , SSH6N70A , SSH6N80AS , SSH6N90A , SSH70N10A , SSH7N60A .
History: SWF8N65DB | IRFB4137PBF
Keywords - SSH60N10A MOSFET datasheet
SSH60N10A cross reference
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History: SWF8N65DB | IRFB4137PBF
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