All MOSFET. CJMPD11 Datasheet

 

CJMPD11 Datasheet and Replacement


   Type Designator: CJMPD11
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: DFNWB2X2-6L
 

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CJMPD11 Datasheet (PDF)

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CJMPD11

CJMPD11 Dual P-Channel Power MOSFETID V(BR)DSS RDS(on)MAX 110m@-4.5 V-2.3 A-20V140m@-2.5 VGeneral Description The CJMPD11 uses advanced trench technology and design to Provide excellent RDS(on) with low gate charge. This device is suitable for use in DC-DC conversion applications. 11 Parameter Symbol Value Unit Drain-Source Voltage V -20 V DSGate-Source Vo

Datasheet: CJK8804 , CJL2013 , CJL2016 , CJL2301 , CJL2623 , CJL8205A , CJM1206 , CJMNP517 , RU7088R , CJND2004 , CJQ07N10 , CJQ4406 , CJQ4435S , CJQ4503 , CJQ4606 , CJQ4800 , CJQ4824 .

History: SI9435BDY-T1-E3 | CJQ4503

Keywords - CJMPD11 MOSFET datasheet

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