CJMPD11 PDF and Equivalents Search

 

CJMPD11 Specs and Replacement

Type Designator: CJMPD11

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: DFNWB2X2-6L

CJMPD11 substitution

- MOSFET ⓘ Cross-Reference Search

 

CJMPD11 datasheet

 ..1. Size:2636K  jiangsu
 cjmpd11.pdf pdf_icon

CJMPD11

CJMPD11 Dual P-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX 110m @-4.5 V -2.3 A -20V 140m @-2.5 V General Description The CJMPD11 uses advanced trench technology and design to Provide excellent RDS(on) with low gate charge. This device is suitable for use in DC-DC conversion applications. 11 Parameter Symbol Value Unit Drain-Source Voltage V -20 V DS Gate-Source Vo... See More ⇒

Detailed specifications: CJK8804, CJL2013, CJL2016, CJL2301, CJL2623, CJL8205A, CJM1206, CJMNP517, RU7088R, CJND2004, CJQ07N10, CJQ4406, CJQ4435S, CJQ4503, CJQ4606, CJQ4800, CJQ4824

Keywords - CJMPD11 MOSFET specs

 CJMPD11 cross reference

 CJMPD11 equivalent finder

 CJMPD11 pdf lookup

 CJMPD11 substitution

 CJMPD11 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

↑ Back to Top
.