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CJND2004 Specs and Replacement

Type Designator: CJND2004

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.9 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: DFNWB2X5-6L-A

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CJND2004 datasheet

 ..1. Size:1954K  jiangsu
 cjnd2004.pdf pdf_icon

CJND2004

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2 5-6L-C Plastic-Encapsulate MOSFETS CJND2004 Dual N-Channel MOSFET DFNWB2X5-6L-A ID V(BR)DSS RDS(on)TYP 8.5 m @4.5V m 8.8 @4.0V 20V 10A 9 m @3.8V 10 m @3.1 V m 11 @2.5V DESCRIPTION The CJND2004 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. ... See More ⇒

Detailed specifications: CJL2013, CJL2016, CJL2301, CJL2623, CJL8205A, CJM1206, CJMNP517, CJMPD11, MMIS60R580P, CJQ07N10, CJQ4406, CJQ4435S, CJQ4503, CJQ4606, CJQ4800, CJQ4824, CJQ4828

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