All MOSFET. CJND2004 Datasheet

 

CJND2004 Datasheet and Replacement


   Type Designator: CJND2004
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.9 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: DFNWB2X5-6L-A
 

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CJND2004 Datasheet (PDF)

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CJND2004

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB25-6L-C Plastic-Encapsulate MOSFETS CJND2004 Dual N-Channel MOSFET DFNWB2X5-6L-A IDV(BR)DSS RDS(on)TYP 8.5 m@4.5V m 8.8 @4.0V20V10A9 m@3.8V10 m@3.1Vm11 @2.5VDESCRIPTION The CJND2004 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected.

Datasheet: CJL2013 , CJL2016 , CJL2301 , CJL2623 , CJL8205A , CJM1206 , CJMNP517 , CJMPD11 , 2N7002 , CJQ07N10 , CJQ4406 , CJQ4435S , CJQ4503 , CJQ4606 , CJQ4800 , CJQ4824 , CJQ4828 .

History: AP9466GS | 2SK3124 | IRFP4110PBF | SE60P20B | P0550BD | 2SK3648-01 | BLD6G22LS-50

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