All MOSFET. CJQ07N10 Datasheet

 

CJQ07N10 Datasheet and Replacement


   Type Designator: CJQ07N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27.2 nS
   Cossⓘ - Output Capacitance: 276 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOP8
 

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CJQ07N10 Datasheet (PDF)

 ..1. Size:3270K  jiangsu
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CJQ07N10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETSCJQ07N10 N-Channel Power MOSFET DESCRIPTION SOP8 The device is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R and gate charge for most of DSON the synchronous buck converter applications . 100% EAS guaranteed with full function reliability ap

Datasheet: CJL2016 , CJL2301 , CJL2623 , CJL8205A , CJM1206 , CJMNP517 , CJMPD11 , CJND2004 , HY1906P , CJQ4406 , CJQ4435S , CJQ4503 , CJQ4606 , CJQ4800 , CJQ4824 , CJQ4828 , CJQ6601 .

History: AON6362 | PMV65ENEA

Keywords - CJQ07N10 MOSFET datasheet

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