CJQ07N10 Specs and Replacement
Type Designator: CJQ07N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27.2 nS
Cossⓘ - Output Capacitance: 276 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOP8
CJQ07N10 substitution
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CJQ07N10 datasheet
cjq07n10.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ07N10 N-Channel Power MOSFET DESCRIPTION SOP8 The device is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R and gate charge for most of DSON the synchronous buck converter applications . 100% EAS guaranteed with full function reliability ap... See More ⇒
Detailed specifications: CJL2016, CJL2301, CJL2623, CJL8205A, CJM1206, CJMNP517, CJMPD11, CJND2004, AOD4184A, CJQ4406, CJQ4435S, CJQ4503, CJQ4606, CJQ4800, CJQ4824, CJQ4828, CJQ6601
Keywords - CJQ07N10 MOSFET specs
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History: AP9451GG | AP9992GR
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