All MOSFET. CJQ4606 Datasheet

 

CJQ4606 Datasheet and Replacement


   Type Designator: CJQ4606
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOP8
 

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CJQ4606 Datasheet (PDF)

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CJQ4606

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4606 N-and P-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)TYP SOP8 19m@10V6.9A30V28m@4.5V29m@-10V-30V -6.0A47m@-4.5VDESCRIPTION Advance Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device desigh, low on-r

Datasheet: CJM1206 , CJMNP517 , CJMPD11 , CJND2004 , CJQ07N10 , CJQ4406 , CJQ4435S , CJQ4503 , IRFP064N , CJQ4800 , CJQ4824 , CJQ4828 , CJQ6601 , CJQ7328 , CJQ9926 , CJS2013 , CJS2016 .

History: AP2P052N | UTM4052L-S08-R | D55NF06 | AP6N6R5LMT-L | PK664BA

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