CJQ4606 Datasheet and Replacement
Type Designator: CJQ4606
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOP8
CJQ4606 substitution
CJQ4606 Datasheet (PDF)
cjq4606.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4606 N-and P-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)TYP SOP8 19m@10V6.9A30V28m@4.5V29m@-10V-30V -6.0A47m@-4.5VDESCRIPTION Advance Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device desigh, low on-r
Datasheet: CJM1206 , CJMNP517 , CJMPD11 , CJND2004 , CJQ07N10 , CJQ4406 , CJQ4435S , CJQ4503 , IRF730 , CJQ4800 , CJQ4824 , CJQ4828 , CJQ6601 , CJQ7328 , CJQ9926 , CJS2013 , CJS2016 .
History: NTD25P03LG | BLM9926 | LNN06R140
Keywords - CJQ4606 MOSFET datasheet
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History: NTD25P03LG | BLM9926 | LNN06R140



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