CJQ4606 PDF and Equivalents Search

 

CJQ4606 Specs and Replacement

Type Designator: CJQ4606

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOP8

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CJQ4606 datasheet

 ..1. Size:7744K  jiangsu
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CJQ4606

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4606 N-and P-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)TYP SOP8 19m @10V 6.9A 30V 28m @4.5V 29m @-10V -30 V -6.0A 47m @-4.5V DESCRIPTION Advance Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device desigh, low on-r... See More ⇒

Detailed specifications: CJM1206, CJMNP517, CJMPD11, CJND2004, CJQ07N10, CJQ4406, CJQ4435S, CJQ4503, AO4468, CJQ4800, CJQ4824, CJQ4828, CJQ6601, CJQ7328, CJQ9926, CJS2013, CJS2016

Keywords - CJQ4606 MOSFET specs

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