CJQ6601 PDF and Equivalents Search

 

CJQ6601 Specs and Replacement

Type Designator: CJQ6601

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 max nS

Cossⓘ - Output Capacitance: 99 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SOP8

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CJQ6601 datasheet

 ..1. Size:2031K  jiangsu
 cjq6601.pdf pdf_icon

CJQ6601

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ6601 P-channel and N-channel Complementary MOSFETS SOP8 DESCRIPTIONS The Device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. FEATURES Including a N-ch C... See More ⇒

Detailed specifications: CJQ07N10, CJQ4406, CJQ4435S, CJQ4503, CJQ4606, CJQ4800, CJQ4824, CJQ4828, IRF740, CJQ7328, CJQ9926, CJS2013, CJS2016, CJS2019, CJS8804, CJS8810, CJS8820

Keywords - CJQ6601 MOSFET specs

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