All MOSFET. CJQ6601 Datasheet

 

CJQ6601 Datasheet and Replacement


   Type Designator: CJQ6601
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7(max) nS
   Cossⓘ - Output Capacitance: 99 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOP8
 

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CJQ6601 Datasheet (PDF)

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CJQ6601

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETSCJQ6601 P-channel and N-channel Complementary MOSFETSSOP8 DESCRIPTIONS The Device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. FEATURES Including a N-ch C

Datasheet: CJQ07N10 , CJQ4406 , CJQ4435S , CJQ4503 , CJQ4606 , CJQ4800 , CJQ4824 , CJQ4828 , IRF740 , CJQ7328 , CJQ9926 , CJS2013 , CJS2016 , CJS2019 , CJS8804 , CJS8810 , CJS8820 .

History: WPT2N31 | WMQ050N04LG2 | NTF5P03T3G | BSC019N04NSG | CS7N60A4R

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