CJQ9926 Datasheet and Replacement
Type Designator: CJQ9926
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60(max) nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SOP8
CJQ9926 substitution
CJQ9926 Datasheet (PDF)
cjq9926.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJQ9926 Dual N-Channel MOSFET SOP8 ID V(BR)DSS RDS(on)MAX 40m@2.5V20V 4.8A30m@ 4.5V FEATURE Advanced trench process technology High density cell design for ultra low on-resistance High power and current handing capability Ideal for Liion battery pack applications MARK
Datasheet: CJQ4435S , CJQ4503 , CJQ4606 , CJQ4800 , CJQ4824 , CJQ4828 , CJQ6601 , CJQ7328 , 20N60 , CJS2013 , CJS2016 , CJS2019 , CJS8804 , CJS8810 , CJS8820 , CJS9004 , CJT04N15 .
History: SUD50P06-15L-GE3
Keywords - CJQ9926 MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SUD50P06-15L-GE3
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