CJQ9926 PDF and Equivalents Search

 

CJQ9926 Specs and Replacement

Type Designator: CJQ9926

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 max nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOP8

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CJQ9926 datasheet

 ..1. Size:3643K  jiangsu
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CJQ9926

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJQ9926 Dual N-Channel MOSFET SOP8 ID V(BR)DSS RDS(on)MAX 40m @2.5V 20V 4.8A 30m @ 4.5 V FEATURE Advanced trench process technology High density cell design for ultra low on-resistance High power and current handing capability Ideal for Liion battery pack applications MARK... See More ⇒

Detailed specifications: CJQ4435S, CJQ4503, CJQ4606, CJQ4800, CJQ4824, CJQ4828, CJQ6601, CJQ7328, 20N60, CJS2013, CJS2016, CJS2019, CJS8804, CJS8810, CJS8820, CJS9004, CJT04N15

Keywords - CJQ9926 MOSFET specs

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