All MOSFET. CJQ9926 Datasheet

 

CJQ9926 Datasheet and Replacement


   Type Designator: CJQ9926
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60(max) nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOP8
 

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CJQ9926 Datasheet (PDF)

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CJQ9926

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJQ9926 Dual N-Channel MOSFET SOP8 ID V(BR)DSS RDS(on)MAX 40m@2.5V20V 4.8A30m@ 4.5V FEATURE Advanced trench process technology High density cell design for ultra low on-resistance High power and current handing capability Ideal for Liion battery pack applications MARK

Datasheet: CJQ4435S , CJQ4503 , CJQ4606 , CJQ4800 , CJQ4824 , CJQ4828 , CJQ6601 , CJQ7328 , 20N60 , CJS2013 , CJS2016 , CJS2019 , CJS8804 , CJS8810 , CJS8820 , CJS9004 , CJT04N15 .

History: SI1070X | NCE65N290D | AO7404 | SSF2314 | HTS240B03 | STD7N60M2 | SI2304DDS

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