All MOSFET. CJT04N15 Datasheet

 

CJT04N15 Datasheet and Replacement


   Type Designator: CJT04N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SOT223
 

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CJT04N15 Datasheet (PDF)

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CJT04N15

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate MOSFETS CJT04N15 N-Channel Power MOSFET ID V (BR)DSS RDS(on)MAX SOT-2234A160m@10V150V GENERAL DESCRIPTION This CJT04N15 use advanced trench technology and 1 2design to provide excellent RDS(ON) with low gate charge.It31. GATE can be used in a wide variety of applications. 2. DR

Datasheet: CJQ9926 , CJS2013 , CJS2016 , CJS2019 , CJS8804 , CJS8810 , CJS8820 , CJS9004 , IRFP260N , CJU20N06 , CJU80N03 , CJX3134K , CJX3139K , CJX3439K , 2N7002KD , FS2301 , FS2302A .

History: AON6154 | IPD60R1K5PFD7S | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT

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