CJT04N15 PDF and Equivalents Search

 

CJT04N15 Specs and Replacement

Type Designator: CJT04N15

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: SOT223

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CJT04N15 datasheet

 ..1. Size:1428K  jiangsu
 cjt04n15.pdf pdf_icon

CJT04N15

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate MOSFETS CJT04N15 N-Channel Power MOSFET ID V (BR)DSS RDS(on)MAX SOT-223 4A 160m @10V 150V GENERAL DESCRIPTION This CJT04N15 use advanced trench technology and 1 2 design to provide excellent RDS(ON) with low gate charge.It 3 1. GATE can be used in a wide variety of applications. 2. DR... See More ⇒

Detailed specifications: CJQ9926, CJS2013, CJS2016, CJS2019, CJS8804, CJS8810, CJS8820, CJS9004, IRLZ44N, CJU20N06, CJU80N03, CJX3134K, CJX3139K, CJX3439K, 2N7002KD, FS2301, FS2302A

Keywords - CJT04N15 MOSFET specs

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