All MOSFET. CJU20N06 Datasheet

 

CJU20N06 Datasheet and Replacement


   Type Designator: CJU20N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO252
 

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CJU20N06 Datasheet (PDF)

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CJU20N06

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU20N06 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX TO-252-2L 20A45m@10V60VGENERAL DESCRIPTION The CJU20N06 uses advanced trench technology and design to 1. GATE provide excellent RDS(ON) with low gate charge. It can be used in a 2. DRAIN wide variety of applications.

Datasheet: CJS2013 , CJS2016 , CJS2019 , CJS8804 , CJS8810 , CJS8820 , CJS9004 , CJT04N15 , IRF640N , CJU80N03 , CJX3134K , CJX3139K , CJX3439K , 2N7002KD , FS2301 , FS2302A , FS2312 .

History: GPT18N50GN247 | RFW2N06RLE | CEB20A03 | KML0D4N20V | FHD4N65D | CEU6336 | AFP2307AS23

Keywords - CJU20N06 MOSFET datasheet

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