CJU20N06 PDF and Equivalents Search

 

CJU20N06 Specs and Replacement

Type Designator: CJU20N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.6 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TO252

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CJU20N06 datasheet

 ..1. Size:2116K  jiangsu
 cju20n06.pdf pdf_icon

CJU20N06

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU20N06 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX TO-252-2L 20A 45m @10V 60V GENERAL DESCRIPTION The CJU20N06 uses advanced trench technology and design to 1. GATE provide excellent RDS(ON) with low gate charge. It can be used in a 2. DRAIN wide variety of applications. ... See More ⇒

Detailed specifications: CJS2013, CJS2016, CJS2019, CJS8804, CJS8810, CJS8820, CJS9004, CJT04N15, IRFB4110, CJU80N03, CJX3134K, CJX3139K, CJX3439K, 2N7002KD, FS2301, FS2302A, FS2312

Keywords - CJU20N06 MOSFET specs

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