All MOSFET. CJU80N03 Datasheet

 

CJU80N03 Datasheet and Replacement


   Type Designator: CJU80N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO252
 

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CJU80N03 Datasheet (PDF)

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CJU80N03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU80N03 N-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX TO-252-2L 6.5m@10V 80A30V 10m@ 5 V 1. GATE DESCRIPTION 2. DRAIN The CJU80N03 uses advanced trench technology and design 3. SOURCE to provide excellent RDS(ON) with low gate charge. It can be used in a wide varie

Datasheet: CJS2016 , CJS2019 , CJS8804 , CJS8810 , CJS8820 , CJS9004 , CJT04N15 , CJU20N06 , IRF630 , CJX3134K , CJX3139K , CJX3439K , 2N7002KD , FS2301 , FS2302A , FS2312 , FS3415K .

History: IXTH36P10

Keywords - CJU80N03 MOSFET datasheet

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