CJU80N03 PDF and Equivalents Search

 

CJU80N03 Specs and Replacement

Type Designator: CJU80N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO252

CJU80N03 substitution

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CJU80N03 datasheet

 ..1. Size:1118K  jiangsu
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CJU80N03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU80N03 N-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX TO-252-2L 6.5m @10V 80A 30V 10m @ 5 V 1. GATE DESCRIPTION 2. DRAIN The CJU80N03 uses advanced trench technology and design 3. SOURCE to provide excellent RDS(ON) with low gate charge. It can be used in a wide varie... See More ⇒

Detailed specifications: CJS2016, CJS2019, CJS8804, CJS8810, CJS8820, CJS9004, CJT04N15, CJU20N06, IRF640N, CJX3134K, CJX3139K, CJX3439K, 2N7002KD, FS2301, FS2302A, FS2312, FS3415K

Keywords - CJU80N03 MOSFET specs

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