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FS2312 Specs and Replacement

Type Designator: FS2312

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 6.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SOT23

FS2312 substitution

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FS2312 datasheet

 ..1. Size:2743K  fuxinsemi
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FS2312

FS2312 N-Channel SMD MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 18m @4.5V 20V 22m @2.5V 6.8A 39m @1.8V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23 Marking S12 www.fuxinsemi.com Page 1 Ver2.1 FS2312 N-Channel SMD MOSFET ... See More ⇒

Detailed specifications: CJU20N06, CJU80N03, CJX3134K, CJX3139K, CJX3439K, 2N7002KD, FS2301, FS2302A, IRFB4115, FS3415K, DMP4N65, DMD4N65, DMT4N65, DMF4N65, DMK4N65, DMG4N65, DMT7N65

Keywords - FS2312 MOSFET specs

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