FS2312 MOSFET. Datasheet pdf. Equivalent
Type Designator: FS2312
Marking Code: S12
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 6.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.2 nC
trⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 165 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOT23
FS2312 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FS2312 Datasheet (PDF)
..1. Size:2743K fuxinsemi
fs2312.pdf
fs2312.pdf
FS2312N-Channel SMD MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 18m@4.5V 20V 22m@2.5V 6.8A 39m@1.8V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagramSOT-23MarkingS12www.fuxinsemi.com Page 1 Ver2.1FS2312N-Channel SMD MOSFET
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
