All MOSFET. DMHT6016LFJ Datasheet

 

DMHT6016LFJ Datasheet and Replacement


   Type Designator: DMHT6016LFJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 282 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: V-DFN5045-12
 

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DMHT6016LFJ Datasheet (PDF)

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DMHT6016LFJ

DMHT6016LFJ 60V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) TA = +25C High Conversion Efficiency 22m @ VGS = 10V 10.6A Low RDS(ON) Minimizes On-State Losses 60V 30m @ VGS = 4.5V 8.7A Low Input Capacitance Fast Switching Speed Tota

Datasheet: DMG1013UWQ , DMG2301L , DMG2301LK , DMG2302UK , DMG2302UQ , DMG2305UXQ , DMG3414UQ , DMG7401SFGQ , AO4407 , DMN1002UCA6 , DMN1003UCA6 , DMN1006UCA6 , DMN2009USS , DMN2036UCB4 , DMN2056U , DMN2058U , DMN3009LFVW .

History: CTN04N7P5 | APT84M50L | MTN1634V8 | LSGG03R020 | SIA537EDJ | UTT6NP10G-S08-R | QM2N7002E3K1

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