DMHT6016LFJ PDF and Equivalents Search

 

DMHT6016LFJ Specs and Replacement

Type Designator: DMHT6016LFJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 282 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: V-DFN5045-12

DMHT6016LFJ substitution

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DMHT6016LFJ datasheet

 ..1. Size:412K  diodes
 dmht6016lfj.pdf pdf_icon

DMHT6016LFJ

DMHT6016LFJ 60V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) TA = +25 C High Conversion Efficiency 22m @ VGS = 10V 10.6A Low RDS(ON) Minimizes On-State Losses 60V 30m @ VGS = 4.5V 8.7A Low Input Capacitance Fast Switching Speed Tota... See More ⇒

Detailed specifications: DMG1013UWQ, DMG2301L, DMG2301LK, DMG2302UK, DMG2302UQ, DMG2305UXQ, DMG3414UQ, DMG7401SFGQ, IRF530, DMN1002UCA6, DMN1003UCA6, DMN1006UCA6, DMN2009USS, DMN2036UCB4, DMN2056U, DMN2058U, DMN3009LFVW

Keywords - DMHT6016LFJ MOSFET specs

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