All MOSFET. SSH70N10A Datasheet

 

SSH70N10A Datasheet and Replacement


   Type Designator: SSH70N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO3P
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SSH70N10A Datasheet (PDF)

 ..1. Size:216K  samsung
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SSH70N10A

SSH70N10AAdvanced Power MOSFETFEATURESBVBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.023 Rugged Gate Oxide Technology Lower Input CapacitanceID = 70 A Improved Gate Charge Extended Safe Operating Area TO-3P 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.018 (Typ.) 1231.Gate 2. Drain 3. So

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History: VBNC1303 | IRFS4010PBF

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