All MOSFET. DMN4800LSSQ Datasheet

 

DMN4800LSSQ MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMN4800LSSQ
   Marking Code: N4800LS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id|ⓘ - Maximum Drain Current: 8.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.7 nC
   trⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 128 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SO8

 DMN4800LSSQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMN4800LSSQ Datasheet (PDF)

 ..1. Size:326K  diodes
 dmn4800lssq.pdf

DMN4800LSSQ DMN4800LSSQ

DMN4800LSSQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max Low Input Capacitance BVDSS RDS(ON) max TA = +25C Fast Switching Speed 14m @ VGS = 10V 8.6A Low Input/Output Leakage 30V 20m @ VGS = 4.5V 7.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi

 4.1. Size:217K  diodes
 dmn4800lssl.pdf

DMN4800LSSQ DMN4800LSSQ

DMN4800LSSLN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefitss 14m @ VGS = 10V ID max V(BR)DSS RDS(on) Low Input Capacitance TA = +25C Fast Switching Speed Low Input/Output Leakage 14m @ VGS = 10V 8.0A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20m @ VGS = 4.5V 6.7A Halogen and Antimony Free. Gr

 4.2. Size:160K  diodes
 dmn4800lss.pdf

DMN4800LSSQ DMN4800LSSQ

DMN4800LSSN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOP-8L 14m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 20m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D Lo

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History: IXFB44N100P

 

 
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