DMN4800LSSQ - аналоги, параметры транзистора - Справочник транзисторов

DMN4800LSSQ даташит

..1. Size:326K diodes
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DMN4800LSSQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max Low Input Capacitance BVDSS RDS(ON) max TA = +25 C Fast Switching Speed 14m @ VGS = 10V 8.6A Low Input/Output Leakage 30V 20m @ VGS = 4.5V 7.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi

4.1. Size:217K diodes
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DMN4800LSSL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefitss 14m @ VGS = 10V ID max V(BR)DSS RDS(on) Low Input Capacitance TA = +25 C Fast Switching Speed Low Input/Output Leakage 14m @ VGS = 10V 8.0A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20m @ VGS = 4.5V 6.7A Halogen and Antimony Free. Gr

4.2. Size:160K diodes
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DMN4800LSS N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOP-8L 14m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 20m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020D Lo

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