DMN65D8LQ MOSFET. Datasheet pdf. Equivalent

   Type Designator: DMN65D8LQ
   Marking Code: MM6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.31 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.87 nC
   trⓘ - Rise Time: 2.8 nS
   Cossⓘ - Output Capacitance: 3.2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: SOT23

DMN65D8LQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS