SSH80N06A PDF and Equivalents Search

 

SSH80N06A Specs and Replacement

Type Designator: SSH80N06A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 1220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO3P

SSH80N06A substitution

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SSH80N06A datasheet

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SSH80N06A

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Detailed specifications: SSH6N70, SSH6N70A, SSH6N80AS, SSH6N90A, SSH70N10A, SSH7N60A, SSH7N80A, SSH7N90A, IRF530, SSH8N55, SSH8N60, SSH8N80A, SSH8N90A, SSH9N80A, SSH9N90A, SSI1N50A, SSI1N60A

Keywords - SSH80N06A MOSFET specs

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