All MOSFET. FHD80N07C Datasheet

 

FHD80N07C Datasheet and Replacement


   Type Designator: FHD80N07C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 59.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 63 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-252
 

 FHD80N07C substitution

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FHD80N07C Datasheet (PDF)

 ..1. Size:860K  feihonltd
 fhd80n07c.pdf pdf_icon

FHD80N07C

N N-CHANNEL MOSFET FHD80N07C MAIN CHARACTERISTICS FEATURES ID 80 A Low gate charge VDSS 63 V Crss ( 180pF) Low Crss (typical 180pF ) Rdson-typ @Vgs=10V 6.3m Fast switching Qg-typ 57nC 100% 100% avalanche tested dv/dt Improved d

 6.1. Size:1309K  feihonltd
 fhs80n07a fhd80n07a.pdf pdf_icon

FHD80N07C

N N-CHANNEL MOSFET FHS80N07A/FHD80N07A MAIN CHARACTERISTICS FEATURES ID 80 A Low gate charge VDSS 68 V Crss ( 270pF) Low Crss (typical 270pF ) Rdson-typ @Vgs=10V 7m Fast switching Qg-typ 73nC 100% 100% avalanche tested dv/dt Imp

 7.1. Size:946K  feihonltd
 fhs80n08b fhd80n08b.pdf pdf_icon

FHD80N07C

N N-CHANNEL MOSFET FHS80N08B/FHD80N08B MAIN CHARACTERISTICS FEATURES ID 80 A Low gate charge VDSS 80 V Crss ( 230pF) Low Crss (typical 230pF ) Rdson-typ @Vgs=10V 8m Fast switching Qg-typ 73nC 100% 100% avalanche tested dv/dt Imp

Datasheet: FHA20N90A , FHA24N50A , FHA28N50A , FHA86N30A , FHA9N90D , FHD150N03B , FHD15N10A , FHD18P10A , IRFP260N , FHF10N80A , FHF18N50A , FHF18N50C , FHF20N60A , FHP20N60A , FHA20N60A , FHF20N65A , FHP20N65A .

History: UT4414 | P0508AT | AP3A010MT | HM75N20 | 2N5398 | RP1E100RPTR | IXTX46N50L

Keywords - FHD80N07C MOSFET datasheet

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