FHD150N03A MOSFET Datasheet: N-Ch, 26V, 150A. Full specification with pinout and replacement list

FHD150N03A Specs and Replacement

   Type Designator: FHD150N03A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 91 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 26 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 119 nS
   Cossⓘ - Output Capacitance: 686 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO-252

FHD150N03A substitution

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FHD150N03A datasheet

..1. Size:1222K feihonltd
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N N-CHANNEL MOSFET FHP150N03A/FHS150N03A/FHD150N03A MAIN CHARACTERISTICS FEATURES ID 150 A Low gate charge VDSS 30V Crss ( 314pF) Low Crss (typical 314pF ) Rdson-typ @Vgs=10V 2.5m Fast switching Rdson-typ @Vgs=4.5V 3.2m 100% 100% avalanc... See More ⇒

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N N-CHANNEL MOSFET FHD150N03B MAIN CHARACTERISTICS FEATURES ID 150 A Low gate charge VDSS 30 V Crss ( 405pF) Low Crss (typical 405pF ) Rdson-typ @Vgs=10V 2.2m Fast switching Rdson-typ @Vgs=4.5V 2.8m 100% 100% avalanche tested Qg-typ ... See More ⇒

8.1. Size:116K china
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FHD150 NPN B C D E F G PCM Tc=25 150 W ICM 15 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=2mA 50 100 150 200 250 300 V V(BR)CEO ICE=2mA 50 100 150 200 250 300 V ICBO VCB=20V 2.0 mA ICEO VCE=20V 2.0 mA VBEsat 3.0 V ... See More ⇒

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