All MOSFET. FHD50N06D Datasheet

 

FHD50N06D Datasheet and Replacement


   Type Designator: FHD50N06D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-252
 

 FHD50N06D substitution

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FHD50N06D Datasheet (PDF)

 ..1. Size:738K  feihonltd
 fhp50n06 fhu50n06d fhd50n06d.pdf pdf_icon

FHD50N06D

N N-CHANNEL MOSFET FHP50N06/FHU50N06D/FHD50N06D MAIN CHARACTERISTICS FEATURES ID 50 A Low gate charge VDSS 60 V Crss ( 130pF) Low Crss (typical 130pF ) Rdson-typ @Vgs=10V 8.5m Fast switching Qg-typ 40nC 100% 100% avalanche tested dv/dt

 6.1. Size:299K  feihonltd
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FHD50N06D

 9.1. Size:135K  china
 fhd50.pdf pdf_icon

FHD50N06D

FHD50 NPN B C D E F G PCM Tc=25 50 W ICM 10 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=1mA 50 100 150 200 250 300 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 V ICBO VCB=20V 1.0 mA ICEO VCE=20V 1.0 mA VBEsat 2.5 V IC=5A

Datasheet: FHD2N65D , FHP3205C , FHP3710C , FHP40N20A , FHP40N20C , FHP4410A , FHP50N06 , FHU50N06D , IRFZ48N , FHP50N06A , FHP50N06C , FHP540A , FHP540C , FHP60N06B , FHP640A , FHP6N90A , FHF6N90A .

History: FHU50N06D | IRF9Z25

Keywords - FHD50N06D MOSFET datasheet

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