All MOSFET. FHP60N06B Datasheet

 

FHP60N06B Datasheet and Replacement


   Type Designator: FHP60N06B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-220
 

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FHP60N06B Datasheet (PDF)

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FHP60N06B

N N-CHANNEL MOSFET FHP60N06B MAIN CHARACTERISTICS FEATURES ID 60 A Low gate charge VDSS 60 V Crss ( 200pF) Low Crss (typical 200pF ) Rdson-typ @Vgs=10V 18m Fast switching Qg-typ 27nC 100% 100% avalanche tested dv/dt Improved dv

Datasheet: FHP4410A , FHP50N06 , FHU50N06D , FHD50N06D , FHP50N06A , FHP50N06C , FHP540A , FHP540C , IRF1405 , FHP640A , FHP6N90A , FHF6N90A , FHP730A , FHF730A , FHP740A , FHP740C , FHP75N100A .

History: CS5N60FA9HD | IRF3706LPBF

Keywords - FHP60N06B MOSFET datasheet

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