All MOSFET. FHP640A Datasheet

 

FHP640A Datasheet and Replacement


   Type Designator: FHP640A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-220
 

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FHP640A Datasheet (PDF)

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FHP640A

N N-CHANNEL MOSFET FHP640A MAIN CHARACTERISTICS FEATURES ID 18A Low gate charge VDSS 200V Crss ( 26pF) Low Crss (typical 26pF ) Rdson-typ @Vgs=10V 0.125 Fast switching Qg-typ 20nC 100% 100% avalanche tested dv/dt Improved dv/dt

Datasheet: FHP50N06 , FHU50N06D , FHD50N06D , FHP50N06A , FHP50N06C , FHP540A , FHP540C , FHP60N06B , 60N06 , FHP6N90A , FHF6N90A , FHP730A , FHF730A , FHP740A , FHP740C , FHP75N100A , FHP75N75A .

History: SIHG22N60S

Keywords - FHP640A MOSFET datasheet

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