FHP640A MOSFET. Datasheet pdf. Equivalent
Type Designator: FHP640A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 175 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-220
FHP640A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FHP640A Datasheet (PDF)
..1. Size:869K feihonltd
fhp640a.pdf
fhp640a.pdf
N N-CHANNEL MOSFET FHP640A MAIN CHARACTERISTICS FEATURES ID 18A Low gate charge VDSS 200V Crss ( 26pF) Low Crss (typical 26pF ) Rdson-typ @Vgs=10V 0.125 Fast switching Qg-typ 20nC 100% 100% avalanche tested dv/dt Improved dv/dt
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