FHP640A Datasheet and Replacement
Type Designator: FHP640A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-220
FHP640A substitution
FHP640A Datasheet (PDF)
fhp640a.pdf
N N-CHANNEL MOSFET FHP640A MAIN CHARACTERISTICS FEATURES ID 18A Low gate charge VDSS 200V Crss ( 26pF) Low Crss (typical 26pF ) Rdson-typ @Vgs=10V 0.125 Fast switching Qg-typ 20nC 100% 100% avalanche tested dv/dt Improved dv/dt
Datasheet: FHP50N06 , FHU50N06D , FHD50N06D , FHP50N06A , FHP50N06C , FHP540A , FHP540C , FHP60N06B , EMB04N03H , FHP6N90A , FHF6N90A , FHP730A , FHF730A , FHP740A , FHP740C , FHP75N100A , FHP75N75A .
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