SSI2N80A Datasheet and Replacement
Type Designator: SSI2N80A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: I2PAK
SSI2N80A substitution
SSI2N80A Datasheet (PDF)
ssi2n60b ssi2n60b ssw2n60b.pdf
November 2001SSW2N60B / SSI2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored
Datasheet: SSH8N60 , SSH8N80A , SSH8N90A , SSH9N80A , SSH9N90A , SSI1N50A , SSI1N60A , SSI2N60A , STF13NM60N , SSI2N90A , SSI3N80A , SSI3N90A , SSI4N60A , SSI4N80A , SSI4N80AS , SSI4N90A , SSI4N90AS .
History: SI4N60-TM3-T | PTS2017
Keywords - SSI2N80A MOSFET datasheet
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History: SI4N60-TM3-T | PTS2017
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